Super Resolution Broadband Plasma Patterned
Wafer Defect Inspection Systems

3900 Series

Product Description

The 3900 Series broadband plasma defect inspection systems provide the ultimate sensitivity at optical inspection speed, enabling wafer-level defect discovery, process debug and excursion monitoring for leading-edge IC devices. Using revolutionary hardware technology to produce super resolution deep ultraviolet (SR-DUV) wavelength bands, the 3900 Series provides the resolution and material contrast required to capture yield-critical defects at 10nm design nodes and beyond. The 3900 Series pairs this sensitivity with optical inspection speed, enabling Discovery at the Speed of Light™, for reduction of the time required for defect discovery and the delivery of wafer-level data for complete characterization of process issues. The 3900 Series broadband plasma inspectors are part of a portfolio of advanced wafer defect inspection and review tools that accelerated the development and production ramp of leading-edge memory and logic devices.

  • Broadband plasma innovations with state-of-the-art light source and optics produce SR-DUV wavelength range for improved material contrast on critical process materials, such as silicon nitride and tungsten, enabling unique defect type capture
  • SR-DUV wavelength band and the industry’s smallest optical inspection pixel provide significantly increased resolution for detection of sub-10nm defects, including unique, yield-critical defect types and defect signatures
  • Multiple optical innovations – including high-resolution optics, low-noise sensor, selectable apertures and multiple wavelength bands – boost defect signal, reduce wafer noise, and provide the flexibility required to detect new defect types across a broad range of process layers and device types
  • Production-level throughput can deliver full wafer inspection in an hour or less, allowing collection of wafer- and lot-level data for a complete understanding and quick debug of critical process issues
  • pin•point™ provides advanced design-based technology that enables the definition of very small care areas for improved defect discovery and monitoring of defects in critical die regions and improved focus on yield-relevant defects through systematic nuisance suppression
  • super•cell™ provides enhanced cell-to-cell inspection for improved defect capture in PMOS and NMOS regions
  • Repeater-in-array inspection capability supports early EUV reticle characterization and monitoring
  • New advanced algorithms, including iColorFilter™, suppress noise related to pattern or process variations, increasing defects’ signal-to-noise ratios for ultimate sensitivity
  • Accu-ray™ and Flex Aperture technologies quickly determine the best optical settings for capture of critical defect types, significantly reducing the time required to discover critical yield issues
  • Synergy with KLA-Tencor’s e-beam defect review and classification systems enables accurate and rapid identification of small defects for faster yield learning


Process Debug: The 3900 Series broadband plasma inspection systems provide inspection capability for process debug for critical integration challenges. With the new SR-DUV wavelength range and small inspection pixel, the 3900 Series produces the resolution and material contrast needed to detect very small, critical pattern and process systematic defects and random physical defects across a range of process layers and device types. Additionally, with a high speed sensor and innovative stage, the 3900 Series inspectors can inspect a full wafer, at high sensitivity, in an hour or less. This allows process engineers to run multiple wafers and multiple lots through the 3900 Series inspector, enabling a complete understanding of the characteristics of certain defect types. With this detailed data, engineers can quickly troubleshoot and debug critical process issues.

Defect Discovery: The multiple technological innovations implemented on the 3900 Series broadband plasma defect inspectors provide the sensitivity required to discover sub-10nm defects and unique defect types, such as bridges, voids, residues and scratches, on multiple process layers. Additionally, optical inspection speed on the 3900 Series enables discovery of unique, wafer-level signatures that help engineers understand critical defect issues. Using pin•point™ design-based technology, the 3900 Series broadband plasma inspectors can discover yield-relevant defects in critical die regions and improve focus on yield-relevant defects through systematic nuisance suppression.

EUV Print Check: The continued development and advancement of EUV lithography requires in-fab inspection solutions to flag on-reticle contamination issues that may result in yield-critical defects printing on every die of the wafer. With the new SR-DUV wavelength range, the 3900 Series broadband plasma inspectors have demonstrated superior sensitivity for print check applications on after-develop inspection (ADI) process layers, providing engineers with critical feedback on EUV technologies.

Excursion Monitoring: The production-worthy throughput of the 3900 Series broadband plasma inspectors enables their use as a high sensitivity excursion monitor for a fab’s production yield ramp. With sensitivity to yield-critical pattern systematic, process systematic and random defects, at a speed that allows for inspection of several wafers per lot, the 3900 Series provides early warning of process drift, allowing engineering to take corrective action before yield is affected.

For information on the 29xx Series broadband plasma patterned wafer defect inspectors, please see the 29xx Series product page.

For other broadband plasma patterned wafer defect inspection tools, please see K-T Certified.

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