Enables Improved LED Substrate and MOCVD Process Control Yield


Product Description

The Candela® 8620 LED substrate and epitaxy (epi) wafer inspection system is designed for LED device manufacturers to provide automated defect inspection for LED substrate materials such as gallium nitride, sapphire, and silicon carbide—enabling enhanced quality control of both opaque and transparent substrates, faster time-to-root cause, and improved Metal Organic Chemical Vapor Deposition (MOCVD) reactor uptime and yield.

With its proprietary optical design and detection technology, the Candela 8620 LED substrate and epi wafer inspection system detects and classifies sub-micron defects that are not consistently identified by current LED substrate inspection methods—thereby enabling for the first time a production line monitor for these yield-limiting defects. As LED manufacturers transition production to larger wafer sizes and introduce new patterned sapphire substrate (PSS) processes, there is significant economic impact of resulting process-induced defects.

Defects from substrate and epi processes impact device performance, yield and field reliability. The Candela 8620 LED substrate and epi wafer inspection system can detect:

  • LED substrate defects such as micro-scratches and micro-cracks which can create epi process defects and directly impact LED yield and reliability
  • Defect sources from lithography and etch processes for patterned sapphire such as missing bumps and resist voids, resulting in epi wafer defects or reduced lumen output
  • Macro- and micro- defects in MOCVD processes, including hexagonal pits and bumps leading to electrical failure, and epi cracks which can adversely impact field reliability

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