|2930 Series||2920 Series||2910 Series||2900 Series|
The 2930 Series broadband plasma defect inspection systems provide advancements in optical defect inspection, enabling discovery of yield-critical defects on leading-edge IC devices. Using enhanced broadband plasma illumination technology, new optics modes, and pin•point™ and super•cell™ technologies, the 2930 and 2935 broadband plasma defect inspectors provide the flexibility required to capture a wide range of defect types and to address optical defect inspection challenges. The sensitivity of the 2930 Series is paired with optical wafer defect inspection speed, enabling fast defect discovery and full characterization of defect issues for proven reduction in defect learning cycle times. The 2930 Series broadband plasma inspectors complement the inspection performance of the 39xx Series broadband plasma inspectors and are part of a broad portfolio of advanced optical defect inspection systems that accelerate the development and production ramp of leading-edge memory and logic devices.
- Broadband plasma illumination technology enhancements deliver >1.3x the light intensity of the 2920 for increased signal on very small yield-critical defects, such as voids and bridges
- Multiple optical innovations – including high-resolution optics, low-noise sensor, two-dimensional Directional E-Field™, selectable apertures and numerous wavelength bands – boost defect signal, reduce wafer noise, and provide the flexibility required to detect new defect types across a broad range of process layers and device types
- pin•point™ provides advanced design-based technology that enables the definition of very small care areas for improved defect discovery and monitoring of defects in critical die regions and improved focus on yield-relevant defects through systematic nuisance suppression
- super•cell™ provides enhanced cell-to-cell inspection for improved defect capture in PMOS and NMOS regions
- Repeater-in-array inspection capability supports early EUV reticle characterization and monitoring
- New advanced algorithms, including iColorFilter™, suppress noise related to pattern or process variations, increasing defects’ signal-to-noise ratios for ultimate sensitivity
- Higher data rate provides the 2930 Series with increased throughput compared to the 2920 Series enabling higher sensitivity operation at the same cost-of-ownership or increased sampling for improved process control
- Accu-ray™ and Flex Aperture technologies quickly determine the best optical settings for capture of critical defect types, significantly reducing the time required to discover critical yield issues
- Stage delivers sub-0.5μm defect coordinate accuracy for faster and more efficient review and classification of defects on the wafer
- Upgradeability from previous-generation 29xx systems and extendible platform architecture protects a fab’s capital investment
- Synergy with KLA-Tencor’s e-beam defect review and classification systems enables accurate and rapid identification of small defects for faster yield learning
Lithography: The technological innovations implemented on the 2930 Series broadband plasma defect inspectors can deliver significantly improved defect capture on after-develop inspection (ADI) layers. The 2930 Series’ performance on ADI is comparable to the defect capture results obtained at after-etch inspection (AEI). This allows engineers to inspect product wafers at ADI instead of AEI, shortening the time required to identify critical excursions in the patterning process and reducing the number of wafers scrapped. In addition, the 2920 Series’ integrated design-aware capability can provide improved process window qualification (PWQ) performance, helping engineers to quickly identify sources of systematic yield loss throughout the lithography process module.
Etch: Used in critical etch line monitoring and defect discovery applications, the 2930 and 2935 inspectors utilize a enhanced broadband plasma illumination and a range of optical modes to capture voids, residues, micro-bridges, bottom bridges, protrusions, and other yield-limiting etch defect types. In addition, by leveraging critical patterns, pin•point can discover and monitor yield-relevant etch defects in dense pattern areas, providing engineers with early feedback on design errors or process drift. Additional innovative algorithms suppress nuisance, thereby reducing the time required to discover etch defects, enabling faster time to resolution of yield issues.
CMP Defects: With the sensitivity improvements provided by increased light intensity and advanced algorithms, the 2930 Series broadband plasma optical defect inspectors can detect opens, voids, bridges and other critical defects on CMP layers. By focusing CMP defect inspection on critical patterns, pin•point technology significantly reduces noise due to line edge roughness and metal grain on BEOL Cu CMP layers, enabling detection of very tiny yield-killer CMP defects in dense pattern regions at advanced design nodes. The performance of the 2930 optical defect inspector on CMP layers enables faster process development and better yield monitoring in the CMP process module.
For information on the 39xx Series broadband plasma patterned wafer defect inspectors, please see the 39xx Series product page.
For other broadband plasma patterned wafer defect inspection tools, please see K-T Certified.
- NanoPoint Overview
- Process Window Qualification using NanoPoint
- Accelerate Yield: Design Based Inspection
- Back to Basics: After-Develop Inspection
- Comparing Patterned Wafer Inspectors - WATIP
- Immersion Lithography Defect Control
- Automated Systematic Discovery for Development and Production
- The Analysis of EUV Mask Defects Using a Wafer Defect Inspection System
- Assessing EUV Mask Defectivity
- Systematic Defect Management by Design Aware Inspection
- Improving Tool Efficiency through Automated Process Window Qualification
- Process Window Centering for 22 nm Lithography
- A New Decision Paradigm for Comparing Patterned Wafer Inspectors
- Defect Monitoring on Memory Devices Using Broadband Brightfield Inspection
- Using Design Based Binning to Improve Defect Excursion Control for 45nm Production
- Defect Criticality Index (DCI): A New Methodology to Improve DOI Sampling Rate
- Advantages of Broadband Illumination for Critical Defect Capture at the 65nm Node and Below
- Broadband Brightfield Inspection Enables Advanced Immersion Lithography Defect Detection