KLA-Tencor’s eDR-52xx wafer defect review systems capture high resolution images of wafer defects detected by inspection tools. These images enable defect classification, helping chipmakers to identify systematic defect sources and resolve yield issues. The latest addition to the eDR-52xx series, the eDR-5210S e-beam wafer defect review system, introduces reticle defect review (RDR) and critical point inspection (CPI) modes, furthering the platform’s ability to identify systematic defects from various sources. The eDR-5210S also features improvements to its automated bare wafer (ABW) defect review mode. Upgradeable in the field from the eDR-5210, the new eDR-5210S is also available as a new defect review system.
In addition to being able to identify systematic defects from various sources, the eDR-5210S includes several advances designed to boost yield and decrease cycle time:
- New one-step, fully automated reticle-to-wafer coordinate transform accelerates and simplifies review of reticle-induced defects on the wafer
- Superb stage accuracy enables direct drive to defect location using small field of view, thereby reducing the time to review by 2x or more
- Best resolution imaging coupled with direct drive ensures re-detection of smallest critical defects found by most advanced wafer inspectors
- Unique access to proprietary data from TeraFab reticle inspection systems further boosts speed and increases accuracy of reticle-induced wafer defect identification
- High speed of RDR mode makes it practical to assess printability of reticle defects across the process window
- CPI can monitor known hot spots—locations where the chip design is less robust to process variation
- Enhancements to industry-leading ABW mode further increase its ability to re-detect bare wafer defects
- Unique connectivity to KLA-Tencor broadband wafer inspection systems accelerates inspection recipe optimization and accuracy, aids in nuisance-defect suppression to enhance defect classification accuracy, and facilitates process window qualification (PWQ)
Defect Imaging: The smallest yield-relevant defects are beyond the resolution limits of optical microscopy; therefore electron-beam imaging is essential to capturing an image detailed enough for defect classification. Effective image capture on the e-beam review tool begins with reliable and efficient re-detection of the defect. The eDR-5210S features proprietary algorithms and industry-leading stage-accuracy that increase defect re-detection rate. The defect review tool’s exceptional image quality is built upon second-generation immersion column technology, an innovative collector configuration, and simultaneous top-down and topographic imaging. The eDR-5210S delivers the resolution and flexibility required to image a broad range of defects on a broad range of layers, for all types of advanced devices.
Defect Classification: Accurate defect classification is essential to determining the source of the defect and addressing the issue. Classification algorithms based on the e-beam image benefit from supplemental information about the defect such as elemental analysis, the corresponding optical image from the inspection tool, and the defect’s design context. The eDR-5210S features easy-to-use, production-worthy classification technology designed to result in an actionable defect Pareto.
Lithography Qualification: The eDR-5210S can help map and monitor the process window in the lithography module, through full support of process window qualification (PWQ), focus-exposure matrix (FEM) and other standard techniques.
Inspector Recipe Optimization: Design-aware capability and the seamless connectivity between the eDR-5210S and KLA-Tencor optical inspectors reduces recipe setup time by ~50%; produces higher quality inspection recipes and results; and enables improved productivity.
Wafer dispositioning after reticle defect is found: Innovative RDR mode allows significantly simplified, accelerated review of potential reticle-induced defect sites. A statistically significant number of die can be visited, which allows more accurate wafer dispositioning.
Incoming reticle quality inspection: The simplicity and speed of RDR mode facilitate the ability to check printability of reticle defects across the process window.
Bare wafer OQC / IQC: High resolution review images and energy-dispersive x-ray (EDX) capability facilitate defect sourcing during development and monitoring during production for wafer manufacturers—and ensure incoming wafer quality at IC fabs.