Process Solutions
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SensArray products are customized to fit the needs of nearly all semiconductor processes. Each combination requires a very specific Process Probe wafer due to the varying temperatures, chemistries, and build of the chamber. By selecting the process area that you work in, you'll be able to find the SensArray solution that is right for you!

 

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Atmospheric & Belt CVD

At SensArray, we pride ourselves on matching the right product with any system.

SensArray’s Process Probe 1630 instrumented wafers enable precise in-situ characterization of wafer temperature profiles for atmospheric and belt CVD systems. With the Process Probe 1630, you can monitor and optimize film characteristics in Watkins Johnson deposition systems, and other types of CVD equipment that require rugged test wafers. By utilizing the patented ThermaBond technique, the thermocouple bond to the silicon substrate increases the heat transfer allowing for tighter tracking and high accuracy, especially when measuring gas injector temperatures. Determine edge to center temperature to adjust heater zone set points. Measure drift in deposition temperature to adjust for heat transfer changes from oxide build-up on the heaters and belt.

 

  • Profile furnaces
  • Measure N2 curtain uniformity

Process Probe 1630

SensArray 1630

 

 

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Downstream Plasma Etch/Strip

At SensArray, we pride ourselves on matching the right product with any system.

With the Process Probe 1530, you get an ideal solution for characterizing and fine-tuning your process conditions to improve equipment performance, wafer quality, and yield.

The Process Probe 1530 is designed for use in temperatures ranging from 0°C to 1100°C, and for a wide range of applications including cold wall, RTP, sputtering, CVD, plasma strippers, and Epitaxial reactors. Our specially patented ThermaBond technique is utilized to ceramically bond the deeply immersed thermocouple into a re-entrant cavity in the silicon to improve heat transfer and bond strength. Measure wafer temperatures directly, in real time, during each critical step of your process cycle.

Optimize temperature controller parameters, improve uniformity in multi-zone heaters, and determine wafer temperature stabilization times.

 

  • Analyze temperature lead/lag and offset between wafer and process control sensor (1530)
  • Analyze the impact of lamp power percentage on wafer stabilization
    time (1530)
  • Optimize wafer heater control parameters (1530)
  • Independently analyze wafer heating profiles from plasma source and substrate heater (1530)
  • Diagnose sources of strip uniformity problems (1530)

Process Probe 1530

SensArray 1530

 

 

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EPI Processing

With the Process Probe 1530, you get an ideal solution for characterizing and fine-tuning your process conditions to improve equipment performance, wafer quality, and yield.

The Process Probe 1530 is designed for use in temperatures ranging from 0°C to 1100°C, and for a wide range of applications including cold wall, RTP, sputtering, CVD, plasma strippers, and Epitaxial reactors. Our specially patented ThermaBond technique is utilized to ceramically bond the deeply immersed thermocouple into a re-entrant cavity in the silicon to improve heat transfer and bond strength. Measure wafer temperatures directly, in real time, during each critical step of your process cycle.

Optimize temperature controller parameters, improve uniformity in multi-zone heaters, and determine wafer temperature stabilization times.

 

  • Determine substrate temperature
  • Calibrate system temperature monitors

Process Probe 1530

SensArray 1530

 

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Flat Panel Substrates

SensArray offers a complete set of flexible tools for measuring and analyzing FPD thermal processes. Our solutions can be used by tool manufacturers during R&D to perform quality control checks, helping to shorten development cycles. They can also be used for troubleshooting in the field, as well as for maintenance routines performed by the tool manufacturers or by the FPD manufacturers themselves.

 

  • Measure temperature uniformity for Dielectrics and amorphous / polysilicon deposition
  • Measure transient temperature in
    gate deposition

 Flat Panel 2030

SensArray 2030

 

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Hot Wall

At SensArray, we pride ourselves on matching the right product with any system.

The Process Probe 1535-instrumented wafer is ideal for process temperature monitoring of hot wall systems, and oxidizing cold wall environments.

Use the Process Probe 1535 in a variety of equipment, over a wide range of temperatures from 0°C to 1100°C. With exceptional measurement accuracy, you can tighten control parameters, reduce equipment qualification time, calibrate temperature setpoints, and optimize edge to center temperature differentials to minimize wafer stress.

The ThermaBond technique, which embeds the thermocouple sensors into the silicon, delivers unprecedented measurement accuracy and optimum reliability. Durable, easy to use, and versatile, the Process Probe 1535 wafer ensures an excellent return on your investment in quality improvement.

 

  • Compare wafer temperature to profile thermocouples (1535)
  • Check wafer center-to-edge thermal stresses during loading and ramping (1535)
  • Optimize wafer pitch vs. thermal induced stress (1535)
  • Obtain thermal wafer data for optimizing model-based control parameters and evaluating the results (1535)

Process Probe 1535 

SensArray 1535

 

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Ion Implantation Systems

APTI

APTI Wafers

i3 Integral SensorWafer for Implant

i3 Integral for Implant

 

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LPCVD Hot Wall

The Process Probe 1535-instrumented wafer is ideal for process temperature monitoring of hot wall systems, and oxidizing cold wall environments.

Use the Process Probe 1535 in a variety of equipment, over a wide range of temperatures from 0°C to 1100°C. With exceptional measurement accuracy, you can tighten control parameters, reduce equipment qualification time, calibrate temperature setpoints, and optimize edge to center temperature differentials to minimize wafer stress.

The ThermaBond technique, which embeds the thermocouple sensors into the silicon, delivers unprecedented measurement accuracy and optimum reliability. Durable, easy to use, and versatile, the Process Probe 1535 wafer ensures an excellent return on your investment in quality improvement.

 

  • Determine wafer and load thermal stabilization times
  • Measure wafer temperature
    and uniformity
  • Minimize cycle time
  • Optimize wafer pitch versus uniformity and load size
  • Determine wafer temperature vs. position in the load

Process Probe 1535

SensArray 1535

 

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LPCVD/SACVD Cold Wall

SensArray 1530
(0°C to 130°C)

  • Measure wafer and chuck delta T
    with plasma off
  • Measure temperature uniformity
    with plasma off
  • Measure temperatures with gas flows
    and plasma off
Process Probe 1530

 

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MCVD/MOCVD

With the Process Probe 1530, you get an ideal solution for characterizing and fine-tuning your process conditions to improve equipment performance, wafer quality, and yield.

The Process Probe 1530 is designed for use in temperatures ranging from 0°C to 1100°C, and for a wide range of applications including cold wall, RTP, sputtering, CVD, plasma strippers, and Epitaxial reactors. Our specially patented ThermaBond technique is utilized to ceramically bond the deeply immersed thermocouple into a re-entrant cavity in the silicon to improve heat transfer and bond strength. Measure wafer temperatures directly, in real time, during each critical step of your process cycle.

Optimize temperature controller parameters, improve uniformity in multi-zone heaters, and determine wafer temperature stabilization times.

 

  • Determine wafer and chuck delta T
  • Optimize deposition temperature
    and uniformity

Process Probe 1530

SensArray 1530

 

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Ovens

Oven settings can be delicate, and if they fall outside of the process window, valuable product can be lost. Knowing if your oven settings are accurate and maintaining repeatability of optimum settings is vital to the successful outcome of the process. SensArray offers several tools for profiling oven temperature.

 

  • Measure stabilization time and uniformity
  • Calibrate temperature setpoint
  • Evaluate load size effects

Process Probe 1530

SensArray 1530

 

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PECVD

  • Measure stabilization time and uniformity
    (1530 / 1730)
  • Calibrate temperature setpoint
    (1530 / 1730)
  • Evaluate load size effects
    (1530 / 1730)

Process Probe 1530

SensArray 1530

 

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Photoresist Track Systems

Integrated Wafer

Integrated Wafer Processes

BakeTemp SensorWafer

BakeTemp

Process Probe 1730

SensArray 1730

  • Finger print chuck uniformity
    (1730 / 1840)
  • Determine influences of purge and exhaust flows (1730 / 1840)
  • Examine chuck and recovery and stabilization times (1730 / 1840)
  • Check deviations from setpoints
    (1730 / 1840)
  • Accurately measure PEB temperatures for DUV lithography 1840)
  • Provide hot plate zone temperature measurement for adaptive temperature control (1840)
  • Perform system to system temperature matching (1730 / 1840)
  • Monitor HMDS vapor prime process (1730 / 1840)

 

Process Probe 1840

SensArray 1840

  • Monitor temperature of resist and developer dispense nozzle (1400

 

 

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Plasma Etch

Process Probe 2130
Process Probe 2140

PlasmaTemp

  • Characterize temperature uniformity with plasma on
  • Correlate temperature with bias potential

PlasmaVolt X2

  • Characterize RF uniformity with
    plasma on
  • Correlate temperature with
    bias potential

 

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Plasma Strip with Bias Potential

Process Probe 2130 Process Probe 2140 Process Probe 2200

Process Probe 2130
(0°C to 130°C)

  • Monitor temperature during strip with plasma on (2130 / 2140 / 2200)

Process Probe 2140
(-60°C to 420°C)

  • Monitor temperature during strip with plasma on (2130 / 2140 / 2200)

Process Probe 2200
(40°C to 119°C)

  • Monitor temperature during strip with plasma on (2130 / 2140 / 2200)

 

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Prober Hot Plates & Chillers

Process Probe 1730
Process Probe 1840

SensArray 1730

  • Fingerprint chuck uniformity
    (1730 / 1840)
  • Examine chuck recovery and stabilization time (1730 / 1840)
  • Check deviation from setpoint
    (1730 / 1840)
  • Determine thermal transient and
    offset when probes contact wafer
    (1730 / 1840)
 

SensArray 1840

  • Fingerprint chuck uniformity
    (1730 / 1840)
  • Examine chuck recovery and stabilization time (1730 / 1840)
  • Check deviation from setpoint
    (1730 / 1840)
  • Determine thermal transient and
    offset when probes contact wafer
    (1730 / 1840)
Integrated Wafer
 

Integrated Wafer Processes

 
 

 

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PVD

SensArray 1530
(0°C to 130°C)

  • Evaluate degas temperature and uniformity
  • Determine wafer vs. chuck delta T as functions of backside gas flow and clamping force
Process Probe 1530

 

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Rapid Thermal Processing

Process Probe 1530
Process Probe 1535

SensArray 1530

  • Check offsets from control setpoints (1530 / 1535)
  • Verify ramp rate and cycle time
    (1530 / 1535)
  • Examine control parameter effects on overshoot and steady state temperature (1530 / 1535)
  • Optimize lamp bank power settings 1530 / 1535)
  • Measure thermal non-uniformity at any process temperature - instantaneous as well as integrated over time
    (1530 / 1535)
  • Calibrate pyrometers and other in-process temperature sensors
    (1530 / 1535)
 

SensArray 1535

  • Check offsets from control setpoints (1530 / 1535)
  • Verify ramp rate and cycle time
    (1530 / 1535)
  • Examine control parameter effects on overshoot and steady state temperature (1530 / 1535)
  • Optimize lamp bank power settings (1530 / 1535)
  • Measure thermal non-uniformity at any process temperature - instantaneous as well as integrated over time
    (1530 / 1535)
  • Calibrate pyrometers and other in-process temperature sensors
    (1530 / 1535)

 

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Spin-on Dielectric

Process Probe 1530
Process Probe 1850

SensArray 1530

  • Measure hot plate and chill plate uniformity
  • Examine thermal transitions
    between plates
  • Determine purge influence on
    wafer temperature
 

SensArray 1850

  • Measure hot plate and chill
    plate uniformity
  • Examine thermal transitions
    between plates
  • Determine purge influence on
    wafer temperature

 

 

 

 

 

 

 

 

 
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