SAN JOSE, Calif., February 24, 2003-In its latest move to enable device manufacturers to overcome the lithography process control challenges associated with their sub-100-nm processes, KLA-Tencor (NASDAQ: KLAC) today introduced eCD 1-its most advanced CD SEM metrology system. Featuring state of the art precision and resolution in a CD SEM platform, eCD 1 meets the critical dimension (CD) metrology performance requirements for the 90-nm technology node and beyond, and is specifically designed for applications involving 193-nm lithography and very high-aspect ratio (VHAR) structures. A 200-mm/300-mm bridge tool, eCD 1 is based on a new and highly stable platform, and features the industry's highest throughput at 55 wafers per hour. This represents a considerable increase in productivity over previous-generation CD SEMs. Several leading logic device manufacturers have already adopted eCD 1 in their advanced integrated circuit (IC) manufacturing lines.

"One of the most significant industry challenges at the 90-nm node and below is achieving tight gate CD control," stated J. P. Weher, fab operations director at AMD Fab 30. "In a recent evaluation of KLA-Tencor's eCD 1 system, the tool demonstrated the precision and productivity required for in-line CD monitoring of our 90-nm processes. As a result, we've ordered multiple eCD 1 tools to help us accelerate our advanced process development efforts into production."

Gate CD control is the critical speed and device shrink bottleneck for advanced logic devices and microprocessors. Every nanometer in CD variation affects device performance, which consequently impacts yield and bottom-line profitability. At the 90-nm node, for example, a single nanometer reduction in process variation can improve microprocessor speed by 10 MHz. For a high-performance microprocessor, this can add an additional $10 to the device's average selling price (ASP). According to the 2001 International Technology Roadmap for Semiconductors (ITRS), CD metrology precision must be within 0.75 nm (3 sigma) to ensure proper gate CD control at the 90-nm node. At the 65-nm node, 0.5 nm (3 sigma) precision will be required. All design aspects of KLA-Tencor's eCD 1-from mechanical and electrical hardware components to control and metrology algorithms-have been individually optimized to create a highly stable CD SEM platform with sub-0.5 nm (3 sigma) precision, ideally suited for 90-nm node metrology requirements, and readily extendable to the 65-nm node.

eCD 1 incorporates a new electron-beam column and high-precision stage to achieve its industry-leading precision and throughput. Improved ease-of-use in recipe setup and advanced "operator-free" automation enables eCD 1 to seamlessly integrate into a 300-mm production environment. In addition, eCD 1 includes several new and unique capabilities to provide the industry's most comprehensive CD control solution for sub-100-nm device production:

• ImagePlus™: Operating mode that provides control over resolution and depth of focus to enable lithographers to optimize tool performance on features with severe topographies. eCD 1 can measure contacts at the bottom of structures with aspect ratios as high as 20:1

• FlexScan™: New off-axis tilt capability, which enables eCD 1 to generate 3-D profile information (sidewall angle, height) on certain features-providing enhanced in-line process control. Unlike CD SEM tilt systems that require stage movement or use magnetic deflection, eCD 1 is totally hysteresis-free-relying exclusively on electrostatic deflection. As a result, tilt measurements can be performed without compromising metrology performance, thereby providing highly reliable and repeatable measurements

• 193-nm Lithography Compatibility: Advanced algorithms and signal acquisition capabilities that provide leading performance on argon fluoride (ArF) photoresists

Contact:
Meggan Powers
Director Corporate Communications