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Electrical Line Monitoring
Product Description
The eS32 e-beam inspection system delivers the best capture of yield-limiting, buried electrical defects and the small physical defects that optical systems cannot find. With high sensitivity, voltage contrast capabilities, proprietary charge control techniques, and advanced binning, the eS32 offers an extendible, cost-effective inspection solution for both development and production applications at the 65nm node and beyond.
- Widest range of beam conditions and proprietary charge control techniques provide best capture of buried electrical and small physical defects
- Unique onboard µLoop methodology enables high speed detection of systematic defects for faster root-cause analysis and technology development
- Voltage contrast provides capture and inline monitoring of buried FEOL and BEOL electrical defects, improving time to results by finding electrical failures closer to the source layer
- Design-aware binning and inline automatic defect classification convert defect data to a meaningful Pareto
- Field upgradeability protects a fab’s capital investment
- Common user interface with KLA-Tencor’s optical inspectors and e-beam review tool enhances ease of use and optimizes the efficiency of the overall inspection solution
Applications
FEOL: Typical FEOL physical defects detected include STI/poly stringers and STI voids. Voltage contrast mode allows detection of source/drain leakage, gate leakage, and active device turn on or off.
CMP: Defects detected at CMP include electrical interconnect defects resulting from incomplete etch (e.g., voids) or plating failure at tungsten CMP, copper CMP, or poly plug fill. Surface problems such as filled micro-scratches, residues and corrosion are also found using voltage contrast mode.
Etch: Patented charge-control technology allows the eS32 to routinely inspect high aspect ratio contacts, vias, and trenches in oxide, and back-end metal layers with sparse geometries.
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Related Information
Technical Publications
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