Defect Inspection

Patterned Wafer

281x Series (2810 and 2815)
Brightfield Patterned Wafer Inspection Systems

Product Description

The 2810 and 2815 are the industry's first memory- and logic-specific full-spectrum DUV/UV/visible brightfield patterned wafer inspection tools, detecting a broad range of defect types on all processing layers at high production throughputs. Utilized for systematic yield improvements and baseline defectivity reduction on memory and logic devices at the 55/45nm nodes and beyond, the 281x inspectors serve as a critical component of a fab's yield management strategy.

  • Customized optical modes, innovative algorithms and selectable full-spectrum DUV/UV/visible illumination produce the highest sensitivity to defects of interest on all layers
  • Highest weighted average throughput in production enables higher lot sampling, lower cost of ownership or higher sensitivity inspections
  • Commonality and connectivity with other KLA-Tencor inspectors and review tools optimize inspector capacity and reduce production integration time
  • Automated recipe optimization tools (such as automatic care area setup), and recipe optimization either off-line or on KLA-Tencor's eDR-5200 review system reduce the time required for recipe creation
  • Established, production-proven, highly extendible tool architecture provides reliable line monitoring capability for multiple technology nodes

Applications

CMP: The 281x inspectors detect critical CMP defects such as small voids, helping to reduce yield loss in the CMP process module at all stages of the yield ramp.

Etch: The 281x wafer inspection tools are used for critical etch line monitoring applications, capturing line thinning, small bridges, protrusions and other yield-limiting etch defect types.  

Photo: The 2810 and 2815 help engineers solve the yield issues associated with traditional or immersion lithography by photo-cell monitoring (PCM) or after-develop inspection (ADI).

PWQ: The Process Window Qualification (PWQ) application identifies printed reticle design errors, enabling lithographers to qualify the process window for their sub-45nm designs prior to production.

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