| SpectraFx 200 |
Product Description The SpectraFx 200, our seventh-generation thin-film measurement system, enables cost-effective control of IC manufacturers' advanced thin film processes. Based on our proven spectroscopic ellipsometry (SE) technology, the SpectraFx 200 thin film measurement system non-destructively delivers robust, highly accurate measurements of process variation on product wafers.
Applications Shallow trench isolation (STI): SE technology enables complete solution for STI and robust pattern recognition for pre- and post-STI dielectric polish monitoring. Lithography: 150 SE technology determines critical lithography measurements of photoresist and ARC (thickness and RI) for advanced resist development, layer characterization, and process control. Etch: SE technology allows stable, precise measurements on poly gate, dielectric via, and trench etch. Diffusion films: Complete diffusion solution with SWE, SE, and AccuFilm technologies for ultra thin gate oxides, gate ARC layers, ultra thin ONO, high k, silicon-on- insulator (SOI) substrates, and silicon germanium (SiGe) stacks. Chemical vapor deposition (CVD): SE and DBS film measurement capabilities cover a wide range of film thicknesses with a single recipe for multi-layer ARC, hard mask stacks, and copper dual-damascene low-k stacks. Chemical-mechanical planarization (CMP): Industry's smallest SE measurement area enables post-copper CMP dielectric stack measurements. Best-in-class robust pattern recognition and improved Auto Model Select (AMS) features benefit post-copper CMP and other high-end CMP processes. Film measurement capability on patterned metrology targets permits better CMP process control. Metallization: SE technology also allows production-worthy measurement of ultra-thin physical vapor deposition (PVD), CVD, and atomic layer deposition (ALD) metal stacks with high optical extinction coefficients such as Co and Ni salicides, thin TI/TIN liner/barriers, copper barriers, CoWP, Ta, TaN/Ta, and TISIN. Related Information
|
