Product Description

The SpectraCD™ 200 is a non-destructive, inline optical CD and profile metrology system with the precision, throughput and sensitivity to meet the requirements for the 90nm and 65nm nodes. The SpectraCD 200 system delivers high-throughput feature profile information and film-thickness data in a single tool, making it the industry's lowest cost-of-ownership (CoO), production-worthy CD metrology system. Combining accurate 3D modeling for yield-critical structures such as contact holes, with process enabling precision (to 0.5nm) and tool-to-tool matching (to 1nm), SpectraCD 200 provides IC manufacturers with the critical information needed to accurately predict yield and transistor performance inline. This allows fabs to detect process-drift excursions early in the process flow and minimize the cost per good die.

• Improved precision and matching specifications exceed ITRS requirements
• High throughput and short move-acquire-measure (MAM) time allow for increased sampling plans, critical to 300mm wafer manufacturing
• Profile measurements are non-destructive, reducing or even eliminating costly wafer cross-sections
• Both thin-film and 3D profile data can easily be collected in the same wafer run through a seamless recipe setup approach
• Measurement feedback, including 2D/3D contact holes, improves process control for applications such as shallow trench isolation (STI)

Application

Gate CD Monitor: SpectraCD 200 optical CD measurement and profile metrology system can provide precise CD, contact hole, resist line height, sidewall angle (SWA) and profile information critical to understanding and controlling the gate process before and after etch, as well as the pattern transfer of resist lines.

3D STI Process Monitor: Comparisons of the SpectraCD 200 optical CD measurement and profile metrology system data to actual STI structures show excellent correlation, allowing for thorough monitoring of the STI process on product wafers without the cost and time penalty associated with cross-section and AFM metrology techniques. This allows for simplification and reduction in process control cycle time by combining up to three metrology steps into one SpectraCD measurement.

Trench Monitor: SpectraCD 200 optical CD measurement and profile metrology system offers non-destructive SE measurement to fully characterize the trench process. With each measurement, users can review the profile shape, trench depth and CD at any point along the profile. This information helps to monitor this increasingly critical process step.

SiGe Recess Monitor: The SpectraCD 200 CD and profile metrology system offers non-destructive SE measurement to fully characterize the SiGe recess etch and fill processes. With each measurement, users can review multiple characteristics of the recess (CD, SWA, and depth) as well as detect undercutting.

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Related Information
SpectraCD 200 Product Overview
Sectroscopic Critical Dimension (SCD) Metrology for CD Control and Stepper Characterization  (4/2/2002)  
KLA-Tencor Introduces Spectroscopic Critical Dimension Metrology Solution for Sub-100-Nanometer Device Production (6/28/2001)