Product Description

ASET-F5x can measure materials across a continuous wavelength spectrum from 190 nm to 800 nm-a critical feature for meeting the stringent thin film measurement requirements down to 0.1 micron geometries.

• Accurately measures complex multi-layer thin film stacks using spectroscopic ellipsometry
• Precisely measures advanced, ultra-thin gate dielectric films
• Develops and optimizes film dispersion models offline
• Provides the accuracy, repeatability, and system-to-system matching required to monitor advanced ICs with geometries as small as 0.1 micron
• Provides critical measurements for film deposition, CMP, lithography, and etch applications
• Capable of measuring wafer bow wafer stress

Application

Diffusion Films/Film Deposition Complete diffusion solution in SWE and SE technologies. SE and DBS measurement capabilities cover a wide range of thicknesses and indices with a single recipe.

CMP Unique capability to determine transparent film thickness on a metal array. Best-in-class robust pattern recognition and auto model select features are an added advantage for accurate and fast model recognition, especially for CMP processes.

Lithography SE and DUV spectrometry technologies determine critical lithography measurements including photoresist and BARC (bottom anti-reflective coating) thickness.

Etch SE technology has the capability to compensate for surface roughness, which enables more accurate and precise RI measurement for etch to thin films. SE also allows precise and stable measurements of top layer thin film for etch to clear films.

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• ASET-F5x Product Overview.pdf
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