RAPID IC Fab Series
Reticle Defect Inspection Systems for IC Fab Applications
Teron SL650 X5.2
Teron650 alt

Product Description

The Teron™ SL650 reticle defect inspection system provides advanced technologies to support IC fabs’ reticle monitoring requirements for the 20nm design node and beyond. With 193nm illumination and STARlight™ technologies, the Teron SL650 produces the sensitivity required to monitor reticle degradation and detect yield-critical reticle defects, such as haze growth defects or contamination in patterned and open areas. The Teron SL650 reticle defect inspection system also has industry-leading throughput, supporting the fast cycle times needed to qualify the increased number of reticles associated with multi-patterning techniques and advanced IC design nodes. Used to assess incoming reticle quality and to re-qualify reticles during production use and after reticle cleaning, the Teron SL650 reticle defect inspection system helps chipmakers protect yield by reducing the risk of printing defective wafers.

  • 193nm illumination technology, new stage and algorithm improvements produce the best signal-to-noise ratio for capture of yield-critical reticle defects such as on-edge haze defects and contamination in pattern and open areas
  • New hardware and optimized subsystems enable fast throughput, reducing reticle inspection cycle time and cost of ownership for the IC fab
  • STARlightSD™ and STARlight MD™ defect inspection modes deliver full area coverage on single- and multi-die reticles; preferential defect capture on edges and sidewalls of pattern; and dependable capture of defects in open areas
  • STARlightMaps™ tracks reticle degradation over time and highlights critical dimension (CD), film thickness, anti-reflective coating and other variations across the reticle that can affect the process window or pattern printing
  • Production-proven platform with demonstrated high reliability protects a fab’s capital investment
  • EUV-compatible architecture enables early collaboration on in-fab EUV reticle inspection requirements
  • Optional Klarity Reticle data analysis and management system is designed to help engineers disposition the reticle and optimize its cleaning frequency based on historical trends


Reticle Re-Qualification: High sensitivity defect inspections are needed for early detection of haze defects and other progressive defects that occur unpredictably in the fab. Because these haze defects and other reticle defects threaten the yield of every subsequent wafer printed, capturing the reticle defects before they are printed on the wafer is the best means of protecting yield. After the reticle has been used to print many wafers, or after it has been cleaned, it is inspected to re-qualify it for the production line. In addition to defect inspection, the Teron SL650 reticle defect inspection system can monitor reticle degradation over time using STARlightMaps™ technology. By providing early detection of reticle variations that can affect the pattern printing quality and narrow the process window, STARlightMaps™ helps IC fabs maintain device yield, performance and reliability.

Incoming Quality Check: The Teron SL650 reticle defect inspection system can be used to verify that reticles delivered to the IC fab meet strict quality specifications and to check for defects added to the reticle during shipment. In addition, the Teron SL650 produces the reticle inspection data necessary to benchmark vendors or support a routine quality-control program.

Additional Products

X5.2: Reticle inspection system for non-critical reticles or reticle sets for ≥20nm design node IC technologies. The X5.2 reticle inspectors are available as a new system or as a field upgrade to existing TeraFab models.


For other reticle defect inspection tools, please see K-T Certified.

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