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The SpectraCD-XTR optical CD/profile metrology system delivers improved precision accuracy, and tool-to-tool matching at the highest throughput and lowest cost-of-ownership (CoO) available. Evolved from the industry-leading, fourth-generation SpectraCD-XT system, the SpectraCD-XTR optical CD and profile metrology system uses patented spectroscopic ellipsometry (SE) technology to give chipmakers the ability to reliably predict performance and yield of complex devices in production and to identify potential yield and performance issues for next-generation products in development.

  • Industry-leading throughput is twice that of traditional CD-SEMs and significantly higher than that of other optical CD systems
  • Improved precision and accuracy over the SpectraCD-XT optical CD system and full profile metrology capability enable next-generation IC product development
  • Highest throughput and best tool-to-tool matching are designed to meet the production needs of high-volume logic, memory, and foundry fabs
  • SpectraCD-XT optical CD and profile metrology tools can be upgraded in the field to XTR capability, as a means of protecting and extending a fab’s capital investment

Application

Production CD line monitoring: Measures production wafers (post-lithography and -etch) to enable accurate CD control. The SpectraCD-XTR optical CD and profile metrology system provides much lower CoO than that of traditional CD-SEM metrology while giving information about profile shape that CD-SEM cannot.

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Product Description

The TeraStar reticle inspection system provides photomask and IC manufacturers with powerful technological and productivity features that enable maximum yields from today’s complex low-k1 reticles. Using triple-beam inspection with synchronous STARlight™ and pattern inspection algorithms, the TeraStar reticle inspection system provides three times the scan speed of previous generation inspection systems. Revolutionary Tera algorithms remove current barriers on linewidth, advanced optical proximity correction (OPC), and phase shift mask (PSM) geometries. TeraStar's low false defect rate and high-speed inspection deliver substantially lower reticle verification costs. Its high throughput and sensitivity make TeraStar ideal for pre-and post-pelliclization inspection in photomask manufacturing operations, as well as for incoming quality control and reticle re-qualification in wafer fabs. Optional defect simulation software assists mask shops and wafer fabs in analyzing how reticle defects print on wafers.

Features

  • High sensitivity to pattern and contamination defects on the chrome surface of the reticle
  • High resolution to inspect advanced optical proximity correction (OPC) and phase shift mask (PSM) reticles
  • Three times or more the productivity of previous generation systems
  • Inspection of the pellicle surface and backside of reticles for new particles added
  • Low cost of ownership (CoO) and best protection in a low-k1 environment
  • Superior review images, improved resolution, and better defect review tools
  • Low false defect counts shorten time to review defects and minimize operator error
  • Provides both die-to-die and die-to-database inspection
  • Provides concurrent multiple-inspection capability
  • Enables detection and disposition of very small energy flux variations on the reticle
  • Maintains high productivity inspection with low false and nuisance defects on most PSM designs
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e-Beam Wafer Defect Review and Classification System
eDR-5210S eDR-5210
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Product Description

KLA-Tencor’s eDR-52xx wafer defect review systems capture high resolution images of wafer defects detected by inspection tools. These images enable defect classification, helping chipmakers to identify systematic defect sources and resolve yield issues. The latest addition to the eDR-52xx series, the eDR-5210S e-beam wafer defect review system, introduces reticle defect review (RDR) and critical point inspection (CPI) modes, furthering the platform’s ability to identify systematic defects from various sources. The eDR-5210S also features improvements to its automated bare wafer (ABW) defect review mode. Upgradeable in the field from the eDR-5210, the new eDR-5210S is also available as a new defect review system.

The eDR-5210S includes several advances designed to boost yield and decrease cycle time:

  • New one-step, fully automated reticle-to-wafer coordinate transform accelerates and simplifies review of reticle-induced defects on the wafer
  • Superb stage accuracy enables direct drive to defect location using small field of view, thereby reducing the time to review by 2x or more
  • Best resolution imaging coupled with direct drive ensures re-detection of smallest critical defects found by most advanced wafer inspectors
  • Unique access to proprietary data from TeraFab reticle inspection systems further boosts speed and increases accuracy of reticle-induced wafer defect identification
  • High speed of RDR mode makes it practical to assess printability of reticle defects across the process window
  • CPI can monitor known hot spots—locations where the chip design is less robust to process variation
  • Enhancements to industry-leading ABW mode further increase its ability to re-detect bare wafer defects
  • Unique connectivity to KLA-Tencor broadband wafer inspection systems accelerates inspection recipe optimization and accuracy, aids in nuisance-defect suppression to enhance defect classification accuracy, and facilitates process window qualification (PWQ)

Applications

Defect Imaging: The smallest yield-relevant defects are beyond the resolution limits of optical microscopy; therefore electron-beam imaging is essential to capturing an image detailed enough for defect classification. Effective image capture on the e-beam review tool begins with reliable and efficient re-detection of the defect. The eDR-5210S features proprietary algorithms and industry-leading stage-accuracy that increase defect re-detection rate. The defect review tool’s exceptional image quality is built upon second-generation immersion column technology, an innovative collector configuration, and simultaneous top-down and topographic imaging. The eDR-5210S delivers the resolution and flexibility required to image a broad range of defects on a broad range of layers, for all types of advanced devices.

Defect Classification: Accurate defect classification is essential to determining the source of the defect and addressing the issue. Classification algorithms based on the e-beam image benefit from supplemental information about the defect such as elemental analysis, the corresponding optical image from the inspection tool, and the defect’s design context. The eDR-5210S features easy-to-use, production-worthy classification technology designed to result in an actionable defect Pareto.

Lithography Qualification: The eDR-5210S can help map and monitor the process window in the lithography module, through full support of process window qualification (PWQ), focus-exposure matrix (FEM) and other standard techniques.

Inspector Recipe Optimization: Design-aware capability and the seamless connectivity between the eDR-5210S and KLA-Tencor optical inspectors reduces recipe setup time by ~50%; produces higher quality inspection recipes and results; and enables improved productivity.

Wafer dispositioning after reticle defect is found: Innovative RDR mode allows significantly simplified, accelerated review of potential reticle-induced defect sites. A statistically significant number of die can be visited, which allows more accurate wafer dispositioning.

Incoming reticle quality inspection: The simplicity and speed of RDR mode facilitate the ability to check printability of reticle defects across the process window.
Bare wafer OQC / IQC: High resolution review images and energy-dispersive x-ray (EDX) capability facilitate defect sourcing during development and monitoring during production for wafer manufacturers—and ensure incoming wafer quality at IC fabs.

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eDR-5210: Previous-generation high resolution e-beam defect review system, upgradeable to eDR-5210S.

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The ASET-F5x thin film metrology system can measure materials across a continuous wavelength spectrum from 190 nm to 800 nm—a critical feature for meeting the stringent thin film measurement requirements down to 0.1 micron geometries.

  • Accurate measurements of complex multi-layer thin film stacks using spectroscopic ellipsometry (SE)
  • Precisely measures advanced, ultra-thin gate dielectric films
  • Develops and optimizes thin film dispersion models offline
  • Provides the thin film measurement accuracy, repeatability, and system-to-system matching required to monitor advanced ICs with geometries as small as 0.1 micron
  • Provides critical measurements for thin film deposition, CMP, lithography, and etch applications
  • Capable of measuring wafer bow wafer stress

Application

Diffusion Thin Films/Film Deposition: Complete diffusion thin film solution in single-wavelength ellipsometry (SWE) and SE technologies. SE and dual-beam spectrophotometry (DBS) measurement capabilities cover a wide range of thin film thicknesses and indices with a single recipe.

CMP: Unique capability to determine transparent thin film thickness on a metal array. Best-in-class robust pattern recognition and auto model select features are an added advantage for accurate and fast model recognition, especially for CMP processes.

Lithography: SE and DUV spectrometry technologies determine critical lithography measurements including photoresist and BARC (bottom anti-reflective coating) thickness.

Etch: SE technology has the capability to compensate for surface roughness, which enables more accurate and precise refractive index (RI) measurement for etch to thin films. SE also allows precise and stable measurements of top layer thin film for etch to clear films.

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Darkfield Patterned Wafer Inspection Systems
puma91xxseries

Product Description

The Puma 91xx Series is a family of laser imaging, darkfield patterned wafer inspectors that effectively disposition wafers and improve the predictability of the chipmaking process by capturing critical defects at high production throughputs. Part of a fab's yield management strategy, the Puma 91xx tools provide excursion monitoring capability for memory and logic devices at the 55/45nm nodes and beyond.

  • Unique optical modes and multiple pixel options provide broad defect type capture at required speed for a range of process layers
  • High production throughputs at required sensitivity enable increased lot sampling or lower cost of ownership
  • Modular design allows various tool configurations, namely Puma 9130 and Puma 9150, spanning applications from tool monitoring to advanced etch and photo
  • Commonality and connectivity with other KLA-Tencor inspectors and review tools optimize inspector capacity and reduce production integration time
  • Established tool architecture and production-proven tool matching produce consistent and reliable excursion monitoring results

Applications

Films: Unique optical features on the Puma 91xx Series wafer inspectors produce superior nuisance suppression and surface selectivity. These capabilities and high production throughputs provide cost-effective defect detection on all films layers

CMP: Flexible polarization options on all Puma 91xx Series inspectors minimize the effects of color variation, while the new optical modes of the Puma 9150 increase the detection of yield-limiting CMP defect types. Tool monitoring with the Puma 91xx wafer inspectors is fast and sensitive, helping to reduce the yield-loss associated with CMP interconnect processes.

Etch: The Puma 91xx’s laser imaging technology provides the resolution necessary to detect pattern defects (bridging, shorts) on etch layers. The higher throughput Puma 91xx inspectors are used for non-critical etch excursion monitoring, while the higher sensitivity broadband brightfield inspectors address critical etch line monitoring applications.

Photo : With high resolution darkfield imaging and multiple optical modes, the Puma 91xx wafer inspection systems capture critical photo defects at high throughputs while effectively suppressing prior-level defects. Puma complements higher sensitivity broadband brightfield inspections by providing an improved sampling option for photo-cell monitoring and after-develop inspection.

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